INHOMOGENEOUS STRAIN STATES IN SPUTTER-DEPOSITED TUNGSTEN THIN-FILMS

Citation
Ic. Noyan et al., INHOMOGENEOUS STRAIN STATES IN SPUTTER-DEPOSITED TUNGSTEN THIN-FILMS, Journal of applied physics, 82(9), 1997, pp. 4300-4302
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
9
Year of publication
1997
Pages
4300 - 4302
Database
ISI
SICI code
0021-8979(1997)82:9<4300:ISSIST>2.0.ZU;2-U
Abstract
The results of an x-ray diffraction study of dc-magnetron sputtered tu ngsten thin films are reported. It is shown that the phase transformat ion from the beta to alpha W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. (C) 1997 American Institute of Phys ics. [S0021-8979(97)01021-9].