ELECTRICAL-PROPERTIES OF SILICON AND BERYLLIUM DOPED (ALYGA1-Y)(0.52)IN0.48P

The electrical properties of silicon and beryllium doped (AlyGa1-y)(0. 52)In0.48P grown by gas source molecular beam epitaxy were studied. Un intentionally doped (GaIn)P has a n-type background concentration of 5 .1 X 10(14) cm(-3) and a free-carrier mobility of similar to 3500 cm(2 )/V s at room temperature. Hall measurements of n-(GaIn)P give a linea r increase in the free-carrier concentration for values up to 4.0 X 10 (18) cm(-3). Silicon doping of (GaIn)P and (Al0.7Ga0.3)(0.52)In0.48P r eveals a linear increase in the impurity carrier concentration for val ues up to 8.0 X 10(18) cm(-3) by capacitance-voltage measurements. In contrast, the free electron concentration saturates at a value of 4.8 X 10(17) cm(-3) in (Al0.7Ga0.3)(0.52)In0.48P, due to Fermi-level pinni ng at the DX level. Beryllium doping of (GaIn)P reveals a linear incre ase in the Hall free-hole concentration for values up to 1.4 X 10(19) cm(-3) with a room-temperature mobility of similar to 34 cm(2)/V s. (C ) 1997 American Institute of Physics. [S0021-8979(97)00621-X].