The effect of hydrogen on strontium bismuth tantalate (SrBi2Ta2O9; SBT
) ferroelectric capacitors is investigated. Using several analytical t
echniques such as x-ray diffraction, electron diffraction, Auger elect
ron, scanning and transmission electron microscopies, the structural a
nd compositional changes in the ferroelectric film are studied as a fu
nction of annealing gas and temperature. The mechanism for hydrogen in
duced damage to the capacitor is identified. Measurements show that th
e hydrogen induces both structural and compositional changes in the fe
rroelectric film. Hydrogen reacts with the bismuth oxide to form bismu
th and the reduced bismuth diffuses out of the SBT film causing the el
ectrodes to peel. (C) 1997 American Institute of Physics. [S0021-8979(
97)04121-2].