NUMERICAL-ANALYSIS OF THE TRANSIENT-RESPONSE IN AMORPHOUS-SILICON

Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, th e transient response after turning the light off is numerically calcul ated. Parameters for the numerical analysis are obtained by fitting th e two families of the measured steady-state characteristics: light-int ensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faste r at higher temperatures and at higher illumination levels. Results ar e compared with measured transients at different temperatures. (C) 199 7 American Institute of Physics. [S0021-8979(97)03620-7].