Using our program, TRansient Amorphous DEvice Simulator (TRADES), for
the simulation of transient phenomena in amorphous silicon devices, th
e transient response after turning the light off is numerically calcul
ated. Parameters for the numerical analysis are obtained by fitting th
e two families of the measured steady-state characteristics: light-int
ensity and temperature dependence of the secondary photocurrent. Using
these parameters, both temperature and light-intensity dependence of
the transients are calculated. It is shown that the transient is faste
r at higher temperatures and at higher illumination levels. Results ar
e compared with measured transients at different temperatures. (C) 199
7 American Institute of Physics. [S0021-8979(97)03620-7].