KINETICS OF GROWTH OF ALAS OXIDE IN SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors
KOLEY B DAGENAIS M JIN R PHAM J SIMONIS G MCLANE G STONE D
Citation
B. Koley et al., KINETICS OF GROWTH OF ALAS OXIDE IN SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Journal of applied physics, 82(9), 1997, pp. 4586-4589
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
9
Year of publication
1997
Pages
4586 - 4589
Database
ISI
SICI code
0021-8979(1997)82:9<4586:KOGOAO>2.0.ZU;2-Z
Abstract
The wet oxidation kinetics of AlAs layers of interest in vertical cavi ty surface emitting laser (VCSEL) fabrication are investigated in deta il. The process is modeled as a diffusion-reaction process. For oxidat ion over a long time interval, variation of the oxidation rate with th e variation of the radius of the etched mesa of the VCSEL is observed. A theory has been developed to obtain the rate equation of the oxidat ion process and the dependence of the oxidation rate on the size of th e VCSEL is explained. (C) 1997 American Institute of Physics. [S0021-8 979(97)07121-1].