INFLUENCE OF MOBILITY FLUCTUATIONS ON RANDOM TELEGRAPH SIGNAL AMPLITUDE IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

The amplitude of random telegraph signals (RTS) in an n-channel metal- oxide-semiconductor field-effect transistor has been investigated. Cur rent fluctuations originating when a single-channel electron is trappe d or detrapped in the silicon dioxide have been evaluated. A simulatio n has been performed where the inversion-layer quantization, the depen dence of the electron mobility on the transverse and longitudinal elec tric fields, and the influence of the oxide charges on free-carrier de nsity and on electron mobility have been taken into account. This proc edure provides the chance of studying the influence of trap depth in t he oxide on the RTS amplitude. In addition, the contributions of the m obility and carrier fluctuations on the amplitude of discrete current switching have been separated, revealing the importance of each factor . Normalized mobility fluctuation has been defined and it was found th at its dependence on the gate and drain voltages helped to explain the behavior of the normalized current fluctuations. Finally, the scatter ing coefficient was evaluated, showing good agreement with previously published data. All these results have allowed us to gain further insi ght into the role played by electron mobility fluctuations on random t elegraph signal amplitude. (C) 1997 American Institute of Physics. [S0 021-8979(97)00421-0].