GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF AN 8.5 MU-M QUANTUM CASCADE LASER

Authors
SLIVKEN S JELEN C RYBALTOWSKI A DIAZ J RAZEGHI M
Citation
S. Slivken et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF AN 8.5 MU-M QUANTUM CASCADE LASER, Applied physics letters, 71(18), 1997, pp. 2593-2595
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
18
Year of publication
1997
Pages
2593 - 2595
Database
ISI
SICI code
0003-6951(1997)71:18<2593:GMEGOA>2.0.ZU;2-0
Abstract
We demonstrate preliminary results for an 8.5 mu m laser emission from quantum cascade lasers grown in a single step by gas-source molecular beam epitaxy. 70 mW peak power per two facets is recorded for all dev ices tested at 79 K with 1 mu s pulses at 200 Hz. For a 3 mm cavity le ngth, lasing persists up to 270 K with a T-0 of 180 K. (C) 1997 Americ an Institute of Physics. [S0003-6951(97)02844-1].