ELECTROOPTIC BIREFRINGENCE IN SEMICONDUCTOR VERTICAL-CAVITY LASERS

Citation
Rfm. Hendriks et al., ELECTROOPTIC BIREFRINGENCE IN SEMICONDUCTOR VERTICAL-CAVITY LASERS, Applied physics letters, 71(18), 1997, pp. 2599-2601
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
18
Year of publication
1997
Pages
2599 - 2601
Database
ISI
SICI code
0003-6951(1997)71:18<2599:EBISVL>2.0.ZU;2-N
Abstract
Birefringence induced by the electro-optic effect is demonstrated in v ertical-cavity surface-emitting lasers (VCSEL). This is done by compar ing two types of optically pumped VCSELs: VCSELs with standard pin-dop ing and VCSELs with symmetrical pip-doping. The observed birefringence in these VCSELs differs by an order of magnitude, a difference that w e ascribe to the presence and absence, respectively, of electro-optic birefringence. (C) 1997 American Institute of Physics.