MICROSCOPIC THEORY OF GAIN FOR AN INGAN ALGAN QUANTUM-WELL LASER/

This letter describes a microscopic gain theory for an InGaN/AlGaN qua ntum well laser. The approach, which is based on the semiconductor Blo ch equations, with carrier correlations treated at the level of quantu m kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under las ing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a stati stical average of the homogeneously broadened spectra. (C) 1997 Americ an Institute of Physics.