COHERENT CONTROL OF CYCLOTRON EMISSION FROM A SEMICONDUCTOR USING SUBPICOSECOND ELECTRIC-FIELD TRANSIENTS

Citation
Pg. Huggard et al., COHERENT CONTROL OF CYCLOTRON EMISSION FROM A SEMICONDUCTOR USING SUBPICOSECOND ELECTRIC-FIELD TRANSIENTS, Applied physics letters, 71(18), 1997, pp. 2647-2649
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
18
Year of publication
1997
Pages
2647 - 2649
Database
ISI
SICI code
0003-6951(1997)71:18<2647:CCOCEF>2.0.ZU;2-4
Abstract
We have demonstrated the excitation and control of coherent cyclotron emission from a semiconductor using a THz beam containing pairs of sub -picosecond electric field pulses closely spaced in time. The source o f THz radiation in these experiments is a biased coplanar stripline fa bricated on semi-insulating GaAs and edge illuminated with pairs of te mporally and spatially separated 70 fs pulses of near infrared light. A GaAs/AlGaAs two-dimensional electron gas was used in the experiments because of its long intraband phase relaxation time. Changes in the a mplitude and phase of the cyclotron emission are observed when varying the interpulse delay and are well described within the theoretical fr amework of a two level system. (C) 1997 American Institute of Physics.