IN-SITU REAL-TIME ANALYSIS OF ALLOY FILM COMPOSITION AND SEGREGATION DYNAMICS WITH PARALLEL DETECTION REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

Authors
AHN CC YOSHINO H TAMBO T WONG SS HE G TAYLOR ME ATWATER HA
Citation
Cc. Ahn et al., IN-SITU REAL-TIME ANALYSIS OF ALLOY FILM COMPOSITION AND SEGREGATION DYNAMICS WITH PARALLEL DETECTION REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied physics letters, 71(18), 1997, pp. 2653-2655
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
18
Year of publication
1997
Pages
2653 - 2655
Database
ISI
SICI code
0003-6951(1997)71:18<2653:IRAOAF>2.0.ZU;2-A
Abstract
Real-time measurements of GexSi1-x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated usi ng parallel detection reflection electron energy loss spectroscopy. Pa rallel detection enables quantitative acquisition of low-loss spectra in a time of < 500 mu s and surface composition determination in GexSi 1-x/Si(001) via Ge L-2,L-3 core loss analysis to a precision of approx imately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) h as also been studied using the Sn M-4,M-5 core loss. (C) 1997 American Institute of Physics.