THERMAL LIMITATION OF SELF-PULSATION IN 650 NM ALGAINP LASER-DIODES WITH AN EPITAXIALLY INTEGRATED ABSORBER

Self-pulsation within 650 nm, AlGaInP laser diodes can be achieved via the use of a saturable absorbing, epitaxial layer within the structur e. A rate equation model of this type of device is presented, which in cludes the process of thermally activated charge transfer from the qua ntum well and gain region to the absorbing layer. The results indicate that this thermal leakage mechanism saturates the absorber and hence destroys the self-pulsation at high temperatures. Comparison of the mo del with recently published experimental data shows good agreement and provides a consistent explanation for the loss of pulsation at temper atures in excess of 60 degrees C. (C) 1997 American Institute of Physi cs.