PHONON GROWTH IN A MANY-VALLEY MODEL SEMICONDUCTOR AT LOW LATTICE TEMPERATURES

Authors
CHAKRABARTI N BHATTACHARYA DP
Citation
N. Chakrabarti et Dp. Bhattacharya, PHONON GROWTH IN A MANY-VALLEY MODEL SEMICONDUCTOR AT LOW LATTICE TEMPERATURES, Czechoslovak journal of Physics, 47(10), 1997, pp. 1037-1041
Citations number
8
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
47
Issue
10
Year of publication
1997
Pages
1037 - 1041
Database
ISI
SICI code
0011-4626(1997)47:10<1037:PGIAMM>2.0.ZU;2-J
Abstract
It is shown how the traditional method of neglecting the energy of aco ustic phonons and approximating their distribution by the equipartitio n law leads to significant errors in the phonon growth rate in a many- valley model semiconductor when the lattice temperature is low.