MULTILAYER STRUCTURES BASED ON DOPED GRADED-BAND-GAP SEMICONDUCTORS -FEATURES OF ENERGY-BAND DIAGRAM

The paper theoretically examines the distinctive features of the energ y band gap diagram of symmetric multilayer structures based on uniform ly doped graded-band-gap semiconductors with constant gradients of ene rgy band gap and electron affinity. By means of analytical and numeric al calculations, it is shown that the energy band diagram of such mult ilayer structures substantially depends on the layer thickness, with i ts largest modification taking place when the layer thickness is of ti le order of the structure Debye screening length.