Bs. Sokolovskii, MULTILAYER STRUCTURES BASED ON DOPED GRADED-BAND-GAP SEMICONDUCTORS -FEATURES OF ENERGY-BAND DIAGRAM, Physica status solidi. a, Applied research, 163(2), 1997, pp. 425-432
The paper theoretically examines the distinctive features of the energ
y band gap diagram of symmetric multilayer structures based on uniform
ly doped graded-band-gap semiconductors with constant gradients of ene
rgy band gap and electron affinity. By means of analytical and numeric
al calculations, it is shown that the energy band diagram of such mult
ilayer structures substantially depends on the layer thickness, with i
ts largest modification taking place when the layer thickness is of ti
le order of the structure Debye screening length.