NUMERICAL-SIMULATION OF AVALANCHE BREAKDOWN WITHIN INP-INGAAS SAGCM STANDOFF AVALANCHE PHOTODIODES

Citation
Jn. Haralson et al., NUMERICAL-SIMULATION OF AVALANCHE BREAKDOWN WITHIN INP-INGAAS SAGCM STANDOFF AVALANCHE PHOTODIODES, Journal of lightwave technology, 15(11), 1997, pp. 2137-2140
Citations number
12
Categorie Soggetti
Optics
ISSN journal
07338724
Volume
15
Issue
11
Year of publication
1997
Pages
2137 - 2140
Database
ISI
SICI code
0733-8724(1997)15:11<2137:NOABWI>2.0.ZU;2-5
Abstract
The breakdown location within a planar InP/In0.53Ga0.47As (InGaAs) sep arate absorption, grading, charge sheet, and multiplication (SAGCM) av alanche photodiode (APD), using the standoff breakdown suppression des ign to replace guard rings, depends on the two-dimensional (2-D) geome try of the Zn diffused well, Since the geometry of this p(+) diffusion is dependent upon the surface etch, the effects of varying the etch d epth (t(standoff)) and length of the sloped etch edge (w(slope)) are s tudied using a two-dimensional drift-diffusion simulator, It is determ ined that the etch depth brackets a region where center breakdown domi nance is possible, To ensure center breakdown within this region it is concluded that there is a maximum value that the slope of the etch wa lls must not exceed.