ION-CUT SILICON-ON-INSULATOR FABRICATION WITH PLASMA IMMERSION ION-IMPLANTATION

We report the implementation of ion-cut silicon-on-insulator (SOI) waf er fabrication technique with plasma immersion ion implantation (PIII) . The hydrogen implantation rate, which is independent of the wafer si ze, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools of fer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only o ne ion species is dominant. The feasibility of performing ion-cut usin g helium PIII is also demonstrated. (C) 1997 American Institute of Phy sics. [S0003-6951(97)00245-3].