HIGHLY ORDERED NANOCHANNEL-ARRAY ARCHITECTURE IN ANODIC ALUMINA

Citation
H. Masuda et al., HIGHLY ORDERED NANOCHANNEL-ARRAY ARCHITECTURE IN ANODIC ALUMINA, Applied physics letters, 71(19), 1997, pp. 2770-2772
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
19
Year of publication
1997
Pages
2770 - 2772
Database
ISI
SICI code
0003-6951(1997)71:19<2770:HONAIA>2.0.ZU;2-C
Abstract
The development of the ordered channel array in the anodic porous alum ina was initiated by the textured pattern of the surface made by the m olding process, and growth of an almost defect-free channel array can be achieved throughout the textured area. The long-range-ordered chann el array with dimensions on the order of millimeters with a channel de nsity of 10(10) cm(-2) was obtained, and the aspect ratio was over 150 . The master for molding could be used many times, which makes it poss ible to overcome problems in the conventional nanolithographic techniq ue, such as low through-put and high cost. (C) 1997 American Institute of Physics. [S0003-6951(97)03145-8].