GROWTH AND DOPING OF SI LAYERS BY MOLECULAR-JET CHEMICAL-VAPOR-DEPOSITION - DEVICE FABRICATION

Homoepitaxial Si films doped both n- and p-type were deposited by mole cular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H-2. Dopin g was accomplished from the background using PH3 for n-type and B2H6 f or p-type. The dopant concentration was controlled over four orders of magnitude (10(15)-10(19) cm(-2)) for films deposited between 650 and 800 degrees C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimizat ion, solar cells constructed from these films had open-circuit voltage s and short-circuit currents as high as 490 mV and 21 mA cm(-2), respe ctively, with fill factors as high as 70%. (C) 1997 American Institute of Physics. [S0003-6951(97)03045-3].