DIRECT CORRELATION OF STRUCTURAL AND OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED DOTS DEPOSITED ON INP(100)

The optical properties of self-assembled InAs dots on InP have been me asured by photoluminescence, and using a selective chemical etching of the InP cap layer, the geometrical properties of the same dots have b een determined by atomic force microscopy. From the dot dimensions, th e calculated (n = 1) electron to heavy hole transition energies with a simple model are strongly correlated to the measured photoluminescenc e spectra. This technique allows a better understanding of the correla tion between structural and optical properties of self-assembled dots. (C) 1997 American Institute of Physics. [S0003-6951(97)02345-0].