REMOTE ELECTRON-BEAM-INDUCED CURRENT IMAGING OF ELECTRICALLY ACTIVE REGIONS IN YBA2CU3O7-X SINGLE-CRYSTALS

Citation
C. Diazguerra et J. Piqueras, REMOTE ELECTRON-BEAM-INDUCED CURRENT IMAGING OF ELECTRICALLY ACTIVE REGIONS IN YBA2CU3O7-X SINGLE-CRYSTALS, Applied physics letters, 71(19), 1997, pp. 2830-2832
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
19
Year of publication
1997
Pages
2830 - 2832
Database
ISI
SICI code
0003-6951(1997)71:19<2830:RECIOE>2.0.ZU;2-C
Abstract
Remote electron beam induced current (REBIC) measurements have been ca rried out to investigate electrically active regions in YBa2Cu3O7-x si ngle crystals. Enhanced REBIC contrast, found in growth steps and othe r topographic features of the samples, is discussed in terms of charge d oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these cryst als is also established. Charge carrier diffusion length has been esti mated at different temperatures from REBIC linescan profiles. (C) 1997 American Institute of Physics. [S0003-6951(97)03345-7].