EFFECTS OF IMPLANTED MATERIALS ON IMPURITY-INDUCED LAYER DISORDERING IN STRAINED GA0.8IN0.2AS GAXIN1-XASYP1-Y/GA0.51IN0.49P/GAAS QUANTUM-WELL STRUCTURE/

Authors
JANG DH LEE JK PARK KH CHO HS SEONG TY PARK CS PYUN KE
Citation
Dh. Jang et al., EFFECTS OF IMPLANTED MATERIALS ON IMPURITY-INDUCED LAYER DISORDERING IN STRAINED GA0.8IN0.2AS GAXIN1-XASYP1-Y/GA0.51IN0.49P/GAAS QUANTUM-WELL STRUCTURE/, JPN J A P 2, 36(10B), 1997, pp. 1364-1366
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
10B
Year of publication
1997
Pages
1364 - 1366
Database
ISI
SICI code
Abstract
The impurity-induced layer disordering in B- or Si-implanted a0.8In0.2 As/GaalphaIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure has b een studied. The wavelength shift of the photoluminescence peak and th e degree of intermixing can be determined by the type and energy of im planted ions with followed annealing at the temperature of 900 degrees C. A photoluminesceuce peak shift of 70 meV was obtained by 120 keV S i-implantation and annealing at 900 degrees C. The diffused interface was also studied by cross sectional transmission electron microscopy.