FIR MAGNETOOPTICAL MEASUREMENTS ON MOCVD GROWN INAS

In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (hal f-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spec tra and in the transmission spectra. A detailed comparison with the th eoretical dependence of shallow donor and Landau level energies on mag netic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in tha t material.