SINGLE TEMPERATURE SCAN DETERMINATION OF DEFECT PARAMETERS IN DLTS EXPERIMENT

Many point and extended defects in silicon, and other semiconducting m aterials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission f rom the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to tile technique, in which after a single temperature scan the complete Arrhenius plot can be construc ted for defects present in the sample with considerable concentrations . This method is much faster, accurate, and offers a much higher resol ution in comparison with the standard DLTS method.