We use the eight-band k.p model to describe the infrared inter-subband
absorption in Si-Si1-xGex-Si quantum wells, which takes explicitly in
to account the Gamma'(25)(Gamma(8)(+) + Gamma(7)(+) in the double grou
p) valence band and the second conduction band Gamma(2)'(Gamma(7)(-)).
We then obtain an accurate description of mixing of the S wave functi
on with the valence band functions.