ANALYSIS OF RESONANT-TUNNELING FOR CDTE-CDMGTE STRUCTURES

In this paper we present model calculations of the current-voltage cha racteristics for the CdTe/CdMgTe double barrier structures based on th e assumption that the electron effective masses in the barrier and wel l regions of double barrier structure are different. The main features of the measured I-V characteristics, i.e., the small current peak at low bias and much larger peak at high voltage, are reproduced quite we ll by the calculated curve. The results of magnetotunneling experiment s can be also understood in the frame of the proposed model.