THEORETICAL AND EXPERIMENTAL-STUDY OF THE RADIATIVE DECAY PROCESS IN A MODULATION-DOPED GAAS ALGAAS HETEROINTERFACE/

We have theoretically and experimentally investigated the radiative re combination process in an n-type modulation doped GaAs/Al0.35Ga0.65As heterostructure. The dynamical reshaping of the potential profile acro ss the heterojunction, and the decay of the spatially indirect radiati ve recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensi ties were compared with experimental data from time-resolved photolumi nescence measurements on an 800 Angstrom wide GaAs/AlGaAs heterostruct ure.