We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn
)Te quasi-bulk films and modulation-doped CdTe/Cd1-yMgyTe two-dimensio
nal (2D) single quantum well structures. Modulation doping with iodine
of CdTe/Cd1-yMgyTe structures resulted in fabrication of a 2D electro
n gas with mobility exceeding 10(5) cm(2)/(V s). This is the highest m
obility reported in wide-gap II-VI materials.