GROWTH AND ELECTRICAL-PROPERTIES OF PHOSPHORUS-DOPED ZN1-XMNXTE CRYSTALS

The high pressure Bridgman technique was used to grow Zn1-xMnxTe:P cry stals. Under the Nz pressure of 30 atm., we obtained the p(+)-Zn1-xMnx Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p approximate to 8 x 10(18) cm(-3) and the room temperature c onductivity sigma(RT) approximate to 30 a(-1) cm(-1). Magnetoresistanc e measurements were carried out down to 1.3 It and up to 6 T. In Zn1-x MnxTe:P a strong increase in the acceptor binding energy as well as an immense (p(0, 1.3 K)/p(6 T, 1.3 K) > 10(3)) negative magnetoresistanc e are observed, by contrast, not seen in diamagnetic ZnTe:P. It is sho wn that these effects come from the formation of bound magnetic polaro ns and their destruction by an external magnetic field.