LOW-VOLTAGE LEAD-ZIRCONATE-TITANATE (PZT) AND LEAD NIOBATE ZIRCONATE-TITANATE (PNZT) HYSTERESIS LOOPS

A major emerging market for ferroelectric non-volatile memories is the RF tag. In that application, low power and low voltage memory operati on is essential. Historically, the lead zirconate titanate (PZT) famil y has not been noted for low voltage hysteresis loops but this is a fu nction of process and not a property of the material. The authors have reduced the saturation voltage for a PZT sol gel process to less than 2.5 V while achieving greater than 40 mu C/cm(2) delta P for 20/80 PZ T using platinum electrodes. Niobium doped PZT has also been fabricate d with the low saturation voltage while producing greater than 30 mu C /cm(2) delta P. The authors report on the electrical properties of the se films.