STEP COVERAGE CHARACTERISTICS OF PB(ZR, TI)O-3 THIN-FILMS ON VARIOUS ELECTRODE MATERIALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The step coverage characteristics of Pb(Zr, Ti)O-3 (PZT) thin films on steps with various electrode materials, such as Pt/SiO2, Ir/SiO2 and IrO2/SiO2, by metalorganic chemical vapor deposition (MOCVD) were inve stigated. The step coverage of PZT films deposited on Pt/SiO2 at 500 a nd 550 degrees C was 80-87%. Deformation of Pt/SiO2 steps was observed when PZT films were deposited at 600 degrees C. The cause of this def ormation of steps was mainly the diffusion of Pb into the steps. When PZT thin films were deposited on Ir/SiO2 at 560-600 degrees C and IrO2 /SiO2 at 500 and 550 degrees C, good step coverage of 76-93% and 70-85 % was obtained, respectively.