SYNTHESIS OF TI(DPM)(2)(OCH3)(2) AND EVALUATION OF THE TIO2 FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Highly pure Ti(DPM)(2)(OCH3)(2) was synthesized by an exchange reactio n of Ti(DPM)(2)(i-OC3H7)(2) With CH3OH. The Ti(DPM)(2)(OCH3)(2) is a w hite crystalline material with a melting point of 80.1 degrees C, havi ng a high vapor pressure the source temperature of 90 degrees C, which enable its stable supply for a long time. At the aim deposition tempe ratures of PZT and BST (500 degrees C-650 degrees C), no gas phase nuc leation reaction was observed. The order of the performance of the ste p coverage for several titanium source materials was Ti(DPM)(2)(OCH3)( 2) > Ti(DPM)(2)(i-OC3H7)(2) > Ti(DPM)(2)Cl-2 > Ti(i-OC3H7)(4). In the case of Ti(DPM)(2)(OCH3)(2), the step coverage for the Si substrate wi th an aspect ratio of 1.0 was 80% under the TiO2 film deposition condi tions of 650 degrees C and 1 Torr.