K. Abe et al., ASYMMETRIC FERROELECTRICITY AND ANOMALOUS CURRENT CONDUCTION IN HETEROEPITAXIAL BATIO3 THIN-FILMS, JPN J A P 1, 36(9B), 1997, pp. 5846-5853
Asymmetric ferroelectricity and conduction of anomalous leakage curren
t were observed in heteroepitaxial BaTiO3 thin films grown by rf magne
tron sputtering at 600 degrees C on three different electrode/substrat
e combinations: SrRuO3/SrTiO3, Pt/MgO and Nb doped SrTiO3. The voltage
shift of hysteresis loops of the capacitance was a linear function of
the thickness of the BaTiO3 films and became as large as 10 V in the
him with a thickness of 410 nm. The asymmetry did not disappear even a
fter a heat treatment carried out at 800 degrees C in air. On the othe
r hand, a steep increase in the leakage current was observed in the he
teroepitaxial films when a positive voltage was applied. The origin of
both the asymmetric hysteresis and the anomalous conduction is discus
sed in terms of asymmetric crystal structure caused by misfit dislocat
ions introduced in heteroepitaxial growth.