Y. Takeshima et al., PREPARATION AND DIELECTRIC-PROPERTIES OF THE MULTILAYER CAPACITOR WITH (BA, SR)TIO3 THIN-LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(9B), 1997, pp. 5870-5873
Barium strontium titanate ((Ba, Sr)TiO3; BST) thin films were prepared
on Pt-coated magnesium oxide single-crystal substrates (Pt(111)/MgO(1
00) and Pt(100)/MgO(100)) at 650 degrees C by metalorganic chemical va
por deposition (MOCVD). The BST films with a perovskite single phase w
ere obtained. Their room-temperature dielectric constant was 400-590 m
easured at 100mV and 1kHz. The leakage current density was below the o
rder of 10(-7) A/cm(2) at 3V, and the breakdown field was above 500kV/
cm. In addition, the multilayer capacitor with five layers of BST was
prepared. The room-temperature capacitance with an effective electrode
area of 0.16 mm(2) was 20nF at 100mV and 1kHz. The leakage current wa
s on the order of 10(-8) A at 1V, and on order of 10(-5) A at 3V.