PROPERTIES OF BI4TI3O12 THIN-FILMS GROWN AT LOW-TEMPERATURES

Bismuth titanate (Bi4Ti3O12) thin films have been deposited on a (100) silicon substrate with a buffer layer, using a rf planer magnetron sp uttering technique. The buffer layer was formed by the heat treatment of an amorphous layer at 550 degrees C, and exhibits a pyrochlore phas e with a smooth surface. The amorphous layer consists of Bi, Ti and O atoms, which are the elements of the ferroelectric Bi4Ti3O12 thin film . Ferroelectric Bi4Ti3O12 thin films were deposited on the buffer laye r at a low substrate temperature of 500 degrees C. The Bi4Ti3O12 thin films have a dense and small grain structure. A D-E hysteresis charact eristic has been observed at room temperature. The apparent remanent p olarization and the apparent coercive field of this film at the measur ement frequency of 50 Hz were estimated to be 2.4 mu C/cm(2) and 2.5 k V/cm, respectively.