PREPARATION OF SRBI2TA2O9 FILM AT LOW-TEMPERATURES AND FABRICATION OFA METAL FERROELECTRIC/INSULATOR/SEMICONDUCTOR FIELD-EFFECT TRANSISTORUSING AL/SRBI2TA2O9/CEO2/SI(100) STRUCTURES/

We report on the fabrication of an n-channel metal/ferroelectric/insul ator/semiconductor (MFIS)-Field Effect Transistor (FET) using Al/SrBi2 Ta2O9/CeO2/Si(100) structures and its characterization, as well as on the preparation of SrBi2Ta2O9 ferroelectric films at low temperatures. SrBi2Ta2O9 ferroelectric films fabricated at about 650 degrees C on a Pt/SiO2/Si substrate had a remanent polarization (P-r) of 7.8 mu C/cm (2). The drain current-gate voltage (I-D-V-G) characteristics of MFIS- FET using the Al/SrBi2Ta2O9/CeO2/Si(100) structure showed threshold hy steresis due to the ferroelectric properties of the SrBi2Ta2O9 film. N onvolatile memory operations of the MFIS-FET were demonstrated by obse rving its drain current (I-D) which was controlled by previously appli ed write voltages.