PREPARATION OF C-AXIS ORIENTED PB(ZR, TI)O-3 THIN-FILMS BY RF-MAGNETRON SPUTTERING AND THEIR DIELECTRIC AND PIEZOELECTRIC PROPERTIES

The c-axis oriented Pb(Zr, Ti)O-3 (PZT) thin films, which have a tetra gonal structure and a composition near the morphotropic phase boundary , have been obtained on (100)MgO substrates with (100)Pt electrodes by rf-magnetron sputtering. These PZT thin films have a remarkably low r elative dielectric constant of 240. The intrinsic piezoelectric and me chanical properties of the thin films were evaluated. The velocity of sound and the mechanical compliance s(11)(E) were measured by the piez oelectric resonance of the cantilever. The piezoelectric coefficient d (31) was measured directly from the transverse expansion of the cantil ever beams. Even without a poling treatment, dal of the PZT thin films was -100 pC/N and almost the same as that of bulk ceramics. The extre mely large piezoelectric coefficient gar of -57 x 10(-3) Vm/N was also estimated because of the large d(31) and remarkably low dielectric co nstant. These PZT thin films are suitable for micro sensor and actuato r applications.