CHARGED DEFECTS AT THE INTERFACE BETWEEN DIRECTLY BONDED SILICON-WAFERS

Authors
LAPORTE A SARRABAYROUSE G BENAMARA M CLAVERIE A ROCHER A PEYRELAVIGNE A
Citation
A. Laporte et al., CHARGED DEFECTS AT THE INTERFACE BETWEEN DIRECTLY BONDED SILICON-WAFERS, JPN J A P 1, 36(9A), 1997, pp. 5502-5506
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
9A
Year of publication
1997
Pages
5502 - 5506
Database
ISI
SICI code
Abstract
The interface between directly bonded hydrophobic silicon wafers is st udied using the spreading resistance technique. It is found that this interface always contains positively charged defects. Possible origins of the defects are discussed on the basis of the morphology of the in terface studied previously.