MEASUREMENT OF THE BREAKDOWN VOLTAGE OF LATERAL POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS ON A SILICON-ON-INSULATOR FILM WITH VARYING THE SURFACE DESIGN AROUND THE GATE REGION

The gate structure dependence of the blocking capability of lateral po wer metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a silicon-on-insulator (SOI) film is investigated. Experimental results of the breakdown voltage with varying the gate electrode and gate oxid e lengths are presented, and are compared with those of the devices fa bricated on a n-type substrate. The breakdown voltage of the SOI devic es is insensitive to the surface design around the gate structure, whi ch is quite different from that of the devices on the n-type substrate .