EFFECT OF A TIO2 BUFFER LAYER ON THE CV PROPERTIES OF PT PBTIO3/TIO2/SI STRUCTURE/

Metal/ferroelectric/insulator/semiconductor (MFIS) capacitors were pre pared by depositing PbTiO3 and TiO2 layers on Si(100) wafers at 450 an d 550 degrees C using metal organic chemical vapor deposition (MOCVD). The C-V properties of the capacitors depend on the quality of TiO2 fi lms and TiO2/Si interfaces. The TiO2 film could serve as an effective buffer layer against the Pb diffusion and provide good C-V properties as long as it was deposited at proper substrate temperature with prope r thickness.