EFFECT OF SPIN INJECTION ON THE CONDUCTION-ELECTRON SPIN-RESONANCE ATA FERROMAGNET SEMICONDUCTOR CONTACT

Citation
Ad. Margulis et Va. Margulis, EFFECT OF SPIN INJECTION ON THE CONDUCTION-ELECTRON SPIN-RESONANCE ATA FERROMAGNET SEMICONDUCTOR CONTACT, Physica. B, Condensed matter, 193(2), 1994, pp. 179-187
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
193
Issue
2
Year of publication
1994
Pages
179 - 187
Database
ISI
SICI code
0921-4526(1994)193:2<179:EOSIOT>2.0.ZU;2-X
Abstract
A theory of the electric dipole spin-resonance (EDSR) absorption for c onduction electrons at a ferromagnet-semiconductor interface is given on the basis of quasiclassical transport equations for moments of the spin density matrix. It is supposed that a uniform DC magnetic field i s applied perpendicular to the interfacial contact plane. An electric current passing through the interface is attended by a spin density fl ow which causes polarization of conduction electrons in a semiconducto r. It is shown that spin injection leads to a considerable increase (e xceeding one order of magnitude) of the EDSR signal intensity in semic onductors having the zinc blende or the wurtzite structure.