DETECTION OF BETA-PARTICLES, CONVERSION ELECTRONS AND GAMMA-RAYS WITHSILICON PLANAR DETECTORS

The performance of n- and p-type silicon detectors manufactured by a r ecently developed planar technology for the detection of beta-particle s, conversion electrons and gamma-rays is reported. Two structures are tested: an ion implanted detector with p+-n-n+ structure and a diffus ion detector with n+-p-p+ structure. The experiments show that planar detectors can be used for high energy electron counting, for gamma-ray detection and for identification of low energy beta-sources. The phen omenon of total absorption of high energy conversion electrons in thin silicon detectors is observed and explained. It is demonstrated that the peaks of total absorption can be used for the estimation of the th ickness of the depleted region of the detector.