An overview is given of recent laboratory developments in wide-bandgap
semiconductor diode lasers. We concentrate on the device science of t
hese blue-green light emitters and outline some of the existing key te
chnical challenges. Following a description of the current device stat
us of the edge-emitting GaN- and ZnSe-based heterojunction lasers, we
illustrate the special features of wide-gap semiconductor lasers by fo
cusing on the physics of optical gain and possibilities in short-verti
cal-cavity structures.