MODELING TEMPERATURE EFFECTS OF QUARTER MICROMETER MOSFETS IN BSIM3V3FOR CIRCUIT SIMULATION

Authors
CHENG YH IMAI K JENG MC LIU ZH CHEN K HU CM
Citation
Yh. Cheng et al., MODELING TEMPERATURE EFFECTS OF QUARTER MICROMETER MOSFETS IN BSIM3V3FOR CIRCUIT SIMULATION, Semiconductor science and technology, 12(11), 1997, pp. 1349-1354
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
11
Year of publication
1997
Pages
1349 - 1354
Database
ISI
SICI code
0268-1242(1997)12:11<1349:MTEOQM>2.0.ZU;2-Y
Abstract
This paper presents the temperature modelling in BSIM3v3 (Berkeley Sho rt-channel IGFET Model version 3), and comparison with measured data f or both n- and p-channel devices with a channel length down to a quart er of a micrometre from room temperature up to 150 degrees C. I-V, G(m ) and G(ds) are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.