SHALLOW THERMAL DONORS ASSOCIATED WITH H, AL AND N IN ANNEALED CZOCHRALSKI SILICON DISTINGUISHED BY INFRARED-SPECTROSCOPY

Authors
PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC LIGHTOWLERS EC GREGORKIEWICZ T ZEVENBERGEN IS AMMERLAAN CAJ FALSTER R BINNS MJ
Citation
Re. Pritchard et al., SHALLOW THERMAL DONORS ASSOCIATED WITH H, AL AND N IN ANNEALED CZOCHRALSKI SILICON DISTINGUISHED BY INFRARED-SPECTROSCOPY, Semiconductor science and technology, 12(11), 1997, pp. 1404-1408
Citations number
34
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
11
Year of publication
1997
Pages
1404 - 1408
Database
ISI
SICI code
0268-1242(1997)12:11<1404:STDAWH>2.0.ZU;2-M
Abstract
Electronic transitions of shallow thermal donors (STDs) in aluminium-d oped Czochralski (CZ) Si annealed at 470 degrees C have different ener gies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated i n nitrogen gas and annealed at 550 degrees C. Combinations of the thre e types of STDs can be observed in suitably treated samples. The incor poration of H and Al in STDs has been supported by electron-nuclear do uble-resonance measurements of the Si-NL10 electron paramagnetic reson ance spectrum but the incorporation of nitrogen remains uncertain.