In n-type step quantum wells composed of indirect-gap semiconductor ma
terial, the optical transitions that are forbidden in commonly used Ga
As/GaAlAs square quantum wells are allowed, The oscillator strengths o
f intersubband transitions from the ground state to the second and the
third excited states for normal-incidence absorption in n-type Ga1-xA
lxSb (0.2 < x < 0.55) step quantum wells are discussed theoretically,
This research makes it possible to provide a new kind of two-colour in
frared detector in the case of normal-incidence.