THE THERMAL-EQUILIBRIUM CHANGES ON REVERSE BIAS ANNEALING IN SCHOTTKYDIODES

Authors
SERIN T
Citation
T. Serin, THE THERMAL-EQUILIBRIUM CHANGES ON REVERSE BIAS ANNEALING IN SCHOTTKYDIODES, Semiconductor science and technology, 12(11), 1997, pp. 1451-1454
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
11
Year of publication
1997
Pages
1451 - 1454
Database
ISI
SICI code
0268-1242(1997)12:11<1451:TTCORB>2.0.ZU;2-S
Abstract
In this study we aimed to research the effect of thermal annealing on thermal equilibrium defect density. In order to realize that goal Scho ttky diodes of Au/a-Si:H/a-Si:H(n-type)/Cr structure were fabricated. The gap states in the energy range of 0.35-0.50 eV were found by Miche lson's drive level profiling method before and after thermal annealing processes in the temperature range 100-175 degrees C. Results about t he thermal annealing effect on the density of states distribution were interpreted in terms of the defect compensation model of doping.