THEORETICAL-STUDY OF RESISTANCE AGAINST LIGHT-INDUCED SCATTERING IN LINBO3-M (M = MG2+, ZN2+, IN3+, SC3+) CRYSTALS

Authors
ZHANG GQ ZHANG GY LIU SM XU JJ TIAN GY SUN Q
Citation
Gq. Zhang et al., THEORETICAL-STUDY OF RESISTANCE AGAINST LIGHT-INDUCED SCATTERING IN LINBO3-M (M = MG2+, ZN2+, IN3+, SC3+) CRYSTALS, Optics letters, 22(22), 1997, pp. 1666-1668
Citations number
12
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
22
Issue
22
Year of publication
1997
Pages
1666 - 1668
Database
ISI
SICI code
0146-9592(1997)22:22<1666:TORALS>2.0.ZU;2-E
Abstract
Based on a multi-three-wave mixing model, we theoretically study the r esistance against light-induced scattering in LiNbO3:M (M = Mg2+, Zn2, In3+, Sc3+) crystals. We have simulated the intensity angular distri bution of light-induced scatterings. We have also shown that the total light-induced scattering will be much less than 1% of the incident li ght intensity when the photovoltaic field E-ph is less than 4.0 x 10(6 ) V/m. Phase gratings and signal beams can still be formed and amplifi ed effectively in LiNbO3:M crystals, with E-ph less than 4.0 x 10(6) V /m. (C) 1997 Optical Society of America.