DISLOCATION-FREE ISLAND FORMATION IN HETEROEPITAXIAL GROWTH - A STUDYAT EQUILIBRIUM

Authors
DARUKA I BARABASI AL
Citation
I. Daruka et Al. Barabasi, DISLOCATION-FREE ISLAND FORMATION IN HETEROEPITAXIAL GROWTH - A STUDYAT EQUILIBRIUM, Physical review letters, 79(19), 1997, pp. 3708-3711
Citations number
19
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
79
Issue
19
Year of publication
1997
Pages
3708 - 3711
Database
ISI
SICI code
0031-9007(1997)79:19<3708:DIFIHG>2.0.ZU;2-F
Abstract
We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation-free island formation, and ripening. The derived phase di agram provides a detailed characterization of the possible growth mode s in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as we ll as ripening. [S0031-9007(97)04531-6].