STUDY ON FENCE-FREE PLATINUM ETCHING USING CHLORINE-BASED GASES IN INDUCTIVELY-COUPLED PLASMA

Authors
CHUNG CW SONG HG
Citation
Cw. Chung et Hg. Song, STUDY ON FENCE-FREE PLATINUM ETCHING USING CHLORINE-BASED GASES IN INDUCTIVELY-COUPLED PLASMA, Journal of the Electrochemical Society, 144(11), 1997, pp. 294-296
Citations number
17
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
144
Issue
11
Year of publication
1997
Pages
294 - 296
Database
ISI
SICI code
0013-4651(1997)144:11<294:SOFPEU>2.0.ZU;2-I
Abstract
Platinum thin films have been successfully etched without redeposition of etch products using chlorine-based gases in an inductively coupled plasma. The redeposited materials formed on the pattern sidewall by u sing Cl-2/Ar gas combination were analyzed by x-ray photoelectron spec troscopy and secondary ion mass spectrometry. We found that the redepo sited material was mainly PtCl2 compound. Based on this result, SiCl4/ Cl-2/Ar gas chemistry has been proposed as a new etching gas and demon strated good etching profile of Pt films without unwanted redeposition .