METAL-INDUCED CRYSTALLIZATION OF A-SI THIN-FILMS BY NONVACUUM TREATMENTS

Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surface treatments with metal-containing sol utions. Two different treatment procedures were demonstrated. With the se treatments, one based on a Pd solution and the other on a Ni soluti on, the SPC time at 600 degrees C was reduced from 18 h to 10 min or l ess. This approach renders the usual vacuum deposition step used in me tal-induced crystallization unnecessary. We find that the ultraviolet reflectance and Raman shift signals for the crystallized films are ind ependent of whether the SPC-enhancing metal is applied by vacuum or so lution. These characterization results do differ, however, with the me tal applied.